Invention Grant
- Patent Title: Method of stiction prevention by patterned anti-stiction layer
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Application No.: US16199461Application Date: 2018-11-26
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Publication No.: US10654707B2Publication Date: 2020-05-19
- Inventor: Kuei-Sung Chang , Fei-Lung Lai , Shang-Ying Tsai , Cheng Yu Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
The present disclosure, in some embodiments, relates to a method for manufacturing a MEMS apparatus. The method may be performed by forming an anti-stiction layer on one or more respective surfaces of a handle substrate and a MEMS substrate. The anti-stiction layer is patterned, therein defining a patterned anti-stiction layer that uncovers one or more predetermined locations associated with a bonding of the handle substrate to the MEMS substrate. The handle substrate is bonded to the MEMS substrate at the one or more predetermined locations.
Public/Granted literature
- US20200024124A1 METHOD OF STICTION PREVENTION BY PATTERNED ANTI-STICTION LAYER Public/Granted day:2020-01-23
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