Invention Grant
- Patent Title: Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
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Application No.: US15520933Application Date: 2016-05-06
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Publication No.: US10655213B2Publication Date: 2020-05-19
- Inventor: Miki Miyanaga , Kenichi Watatani , Hideaki Awata
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Baker Botts L.L.P.
- Agent Michael A. Sartori
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@ac72cf
- International Application: PCT/JP2016/063646 WO 20160506
- International Announcement: WO2017/047152 WO 20170323
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C04B35/01 ; C04B35/64 ; C23C14/08 ; C04B35/626 ; H01L29/786 ; H01L29/66 ; H01L21/02 ; C04B35/453 ; H01J37/34

Abstract:
There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 μm and not more than 50 μm and having an average aspect ratio of not less than 4 and not more than 50.
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