The present technology relates to a solid-state imaging device, a method of manufacturing the same, and an electronic device capable of improving sensitivity in a certain wavelength band and at the same time reducing color mixture of light of other wavelength bands in a photoelectric conversion unit. The solid-state imaging device is provided with a first photoelectric conversion unit which generates a signal charge corresponding to a light amount of light of a first color component on a short wavelength side out of incident light, a second photoelectric conversion unit which generates a signal charge corresponding to a light amount of light of a second color component on a long wavelength side out of the incident light, and a first optical interference film provided between the first photoelectric conversion unit and the second photoelectric conversion unit formed below the first photoelectric conversion unit which transmits the light on the long wavelength side while reflecting the light on the short wavelength side out of the incident light. The present technology may be applied to a CMOS image sensor, for example.