A magnetoresistive random access memory (MRAM) system is described. The system includes a sense amplifier that performs a two-phase read, including a first phase in which a first n-channel transistor is coupled to a reference resistance and a second n-channel transistor is coupled to a data resistance, and a second phase in which the first n-channel transistor is coupled to the data resistance and the second n-channel transistor is coupled to the reference resistance. The circuit further includes a first active amplifier for controlling a gate voltage of the first n-channel transistor and a second active amplifier for controlling a gate voltage of the second n-channel transistor. The circuit further includes a comparator configured to output the data state of the cell based on input of a first voltage related to a reference resistance and a second voltage related to a data resistance.