Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. An inverter within a pre-decoder circuit receives a first input of a clocked address. The inverter determines an output based on the clocked address. An electrical load of a decoder driver circuit of the SRAM device is modified based on the output. Current to a transistor coupled at a common node is provided. The transistor is configured to electrically couple a plurality of transistors of the decoder driver circuit within the SRAM device.