A test method for a memory device which includes performing a first write operation of writing test data to first regions of a normal cell region and a parity cell region, and storing a parity bit generated based on the test data in a temporary storage circuit, performing a second write operation of writing the parity bit stored in the temporary storage circuit to a second region of the parity cell region, performing a first read operation of reading the parity bit from the second region of the parity cell region, and storing the parity bit into the temporary storage circuit, and performing a second read operation of reading the test data from the first regions of the normal cell region and the parity cell region, correcting an error of the test data using the parity bit stored in the temporary storage circuit, and outputting error-corrected test data.