• Patent Title: Plasma reactor vessel having improved plasma uniformity comprised of a first electrode, a second electrode opposed to the first electrode, and a third electrode between a substrate carrier and the second electrode
  • Application No.: US14916214
    Application Date: 2014-09-25
  • Publication No.: US10658159B2
    Publication Date: 2020-05-19
  • Inventor: Omid Reza ShojaeiJacques SchmittFabrice Jeanneret
  • Applicant: Indeotec SA
  • Applicant Address: CH Neuchatel
  • Assignee: INDEOTEC SA
  • Current Assignee: INDEOTEC SA
  • Current Assignee Address: CH Neuchatel
  • Agency: Blank Rome LLP
  • Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7fce7c0a
  • International Application: PCT/EP2014/070542 WO 20140925
  • International Announcement: WO2015/044295 WO 20150402
  • Main IPC: H01J37/32
  • IPC: H01J37/32 C23C16/509
Plasma reactor vessel having improved plasma uniformity comprised of a first electrode, a second electrode opposed to the first electrode, and a third electrode between a substrate carrier and the second electrode
Abstract:
Plasma reactor vessel comprising a vacuum chamber; a first electrode in the vacuum chamber; a second electrode in the vacuum chamber, opposed to the first electrode and spaced from the first electrode; a power source electrically connected to one of the first or second electrodes; a substrate carrier having an electrically conductive material, the substrate carrier being configured to be in electrical contact with the second electrode and to hold a substrate at such that at least the majority of upper and lower surfaces of the substrate are untouched by any part of the plasma reactor and can be exposed to the plasma. The reactor vessel further includes a third electrode between the substrate carrier and the second electrode, wherein the third electrode is electrically insulated from the second electrode. And the third electrode and the substrate carrier are arranged such that when the substrate carrier holds a substrate, a first clearance gap is between the substrate and the third electrode. There is further provided a corresponding assembly and method for performing plasma processing.
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