Invention Grant
- Patent Title: Conformal middle layer for a lithography process
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Application No.: US14846308Application Date: 2015-09-04
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Publication No.: US10658191B2Publication Date: 2020-05-19
- Inventor: Chen-Yu Liu , Ching-Yu Chang , Ming-Huei Weng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/09
- IPC: G03F7/09 ; H01L21/3105 ; H01L21/027 ; G03F7/075

Abstract:
A method includes performing a first polymerization process on a monomer solution to form a partially processed resin solution, the partially processed resin solution comprising a solvent and a silicon-based resin, spin coating the partially processed resin solution on a substrate, and performing a second polymerization process on the partially processed resin solution to shrink the partially processed resin solution to form a conformal silicon-based resin layer.
Public/Granted literature
- US20170069496A1 Conformal Middle Layer For A Lithography Process Public/Granted day:2017-03-09
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