Invention Grant
- Patent Title: Rework for metal interconnects using etch and thermal anneal
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Application No.: US16014780Application Date: 2018-06-21
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Publication No.: US10658235B2Publication Date: 2020-05-19
- Inventor: Prasad Bhosale , Terry A. Spooner , Chih-Chao Yang , Lawrence A. Clevenger
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Wallace & Kammer, LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/67 ; H01L21/66

Abstract:
Metal interconnect structures are reworked to address possible voids or other defects. Etching of initially deposited interconnect metal to open voids is followed by reflow to accumulate interconnect metal at the bottoms of trenches. Additional interconnect metal is deposited over the initially deposited interconnect metal by electroplating and/or electroless plating. Additional diffusion barrier material may be deposited and patterned prior to deposition of the additional interconnect material.
Public/Granted literature
- US20190393085A1 REWORK FOR METAL INTERCONNECTS USING ETCH AND THERMAL ANNEAL Public/Granted day:2019-12-26
Information query
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