Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16095461Application Date: 2016-09-09
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Publication No.: US10658268B2Publication Date: 2020-05-19
- Inventor: Shigeto Fujita , Tetsuya Matsuda
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/076649 WO 20160909
- International Announcement: WO2018/047300 WO 20180315
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/07 ; H01R11/01 ; H01L29/20 ; H01L25/18

Abstract:
A lower electrode, a semiconductor chip provided on the lower electrode, a pressure pad provided above or below the semiconductor chip, an upper electrode provided on a structure in which the pressure pad is overlapped with the semiconductor chip, and a connection conductor that provides a new current path between the lower electrode and the upper electrode only when a distance between the lower electrode and the upper electrode becomes larger than a predetermined value are provided. The distance between the lower electrode and the upper electrode is variable, and the pressure pad electrically connects the lower electrode and the upper electrode together via the semiconductor chip regardless of the distance between the lower electrode and the upper electrode.
Public/Granted literature
- US20190189538A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-20
Information query
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