- Patent Title: Semiconductor device package and method for manufacturing the same
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Application No.: US16179181Application Date: 2018-11-02
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Publication No.: US10658298B1Publication Date: 2020-05-19
- Inventor: Wen-Long Lu
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/00 ; H01L25/065 ; H01L21/56 ; H01L23/31

Abstract:
A semiconductor device package includes a dielectric layer, a first conductive pattern and a first semiconductor device. The dielectric layer has a first surface, wherein a surface uniformity of the first surface is substantially equal to or less than 5%. The first conductive pattern is disposed on the first surface of the dielectric layer, wherein the first conductive pattern includes a first conductive trace, and a line width of the first conductive trace substantially ranges from about 0.5 μm and about 2 μm. The first semiconductor device is disposed on the first surface of the dielectric layer and electrically connected to the first conductive pattern.
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