Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16292477Application Date: 2019-03-05
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Publication No.: US10658305B2Publication Date: 2020-05-19
- Inventor: Motoshi Seto
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3015f4cc
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/48 ; H01L21/00 ; H05K7/00 ; H01L23/556 ; H05K9/00 ; H01L25/065

Abstract:
A semiconductor device according to an embodiment includes a substrate, an α-ray shielding layer, a first semiconductor chip, and a second semiconductor chip. The α-ray shielding layer is provided on the substrate. The first semiconductor chip is provided on the α-ray shielding layer. The second semiconductor chip is provided on the first semiconductor chip, whose operation is controlled by the first semiconductor chip.
Public/Granted literature
- US20200075505A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-05
Information query
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