Invention Grant
- Patent Title: Film scheme for bumping
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Application No.: US15711045Application Date: 2017-09-21
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Publication No.: US10658318B2Publication Date: 2020-05-19
- Inventor: Yao-Wen Chang , Chern-Yow Hsu , Cheng-Yuan Tsai , Kong-Beng Thei
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/288 ; H01L21/311

Abstract:
A bump structure with a barrier layer, and a method for manufacturing the bump structure, are provided. In some embodiments, the bump structure comprises a conductive pad, a conductive bump, and a barrier layer. The conductive pad comprises a pad material. The conductive bump overlies the conductive pad, and comprises a lower bump layer and an upper bump layer covering the lower bump layer. The barrier layer is configured to block movement of the pad material from the conductive pad to the upper bump layer along sidewalls of the lower bump layer. In some embodiments, the barrier layer is a spacer lining the sidewalls of the lower bump layer. In other embodiments, the barrier layer is between the barrier layer and the conductive pad, and spaces the sidewalls of the lower bump layer from the conductive pad.
Public/Granted literature
- US20180151527A1 Film Scheme for Bumping Public/Granted day:2018-05-31
Information query
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