Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16107966Application Date: 2018-08-21
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Publication No.: US10658324B2Publication Date: 2020-05-19
- Inventor: Daisuke Murata , Yuji Imoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3d151be1
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/492 ; H01L23/498 ; H01L23/31 ; H01L25/07
Abstract:
A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more.
Public/Granted literature
- US20180358319A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-13
Information query
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