Invention Grant
- Patent Title: Image sensor and method for manufacturing image sensor
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Application No.: US16022988Application Date: 2018-06-29
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Publication No.: US10658416B2Publication Date: 2020-05-19
- Inventor: Amane Oishi , Xiaolu Huang
- Applicant: HUAIAN IMAGING DEVICE MANUFACTURER CORPORATION
- Applicant Address: CN Huaian
- Assignee: HUAIAN IMAGING DEVICE MANUFACTURER CORPORATION
- Current Assignee: HUAIAN IMAGING DEVICE MANUFACTURER CORPORATION
- Current Assignee Address: CN Huaian
- Agency: Bookoff McAndrews, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@409e81b5
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L29/66 ; H04N5/369 ; H01L31/18 ; H01L31/028 ; H01L31/103 ; H01L29/78
Abstract:
An image sensor may include a semiconductor substrate in which a photodiode is formed; a metal interconnection layer located above the semiconductor substrate; and an absorption layer located between the semiconductor substrate and the metal interconnection layer, wherein the absorption layer is configured to absorb light travelling through the semiconductor substrate.
Public/Granted literature
- US20190237502A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING IMAGE SENSOR Public/Granted day:2019-08-01
Information query
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