Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
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Application No.: US15966601Application Date: 2018-04-30
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Publication No.: US10658418B2Publication Date: 2020-05-19
- Inventor: Hiroki Kasai
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1e76b4fa
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/146 ; H01L27/30

Abstract:
A semiconductor device includes a first semiconductor layer of a first conductivity type having a first surface on one side thereof and a second surface on an opposite side thereof, and having an element therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at the one side of the first surface of the first semiconductor layer, an insulating layer disposed on the first surface of the first semiconductor layer, and a charge-attracting layer configured to attract electrical charges generated in the insulating layer when a predetermined voltage is supplied to the charge-attracting layer.
Public/Granted literature
- US20180247970A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2018-08-30
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