Invention Grant
- Patent Title: Semiconductor device having diode devices with different barrier heights and manufacturing method thereof
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Application No.: US16222464Application Date: 2018-12-17
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Publication No.: US10658456B2Publication Date: 2020-05-19
- Inventor: Wen-Shun Lo , Yu-Chi Chang , Felix Ying-Kit Tsui
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/426
- IPC: H01L21/426 ; H01L29/06 ; H01L21/285 ; H01L29/66 ; H01L29/872 ; H01L21/266 ; H01L27/08 ; H01L21/225 ; H01L27/06
Abstract:
The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the first portion while keeping the second portion from being implanted; forming a first doped region by heating the substrate to cause dopant diffusion between the first portion and the second portion; and forming a metal-containing layer on the first doped region to obtain a Schottky barrier interface.
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Information query
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