Invention Grant
- Patent Title: Device with doped phosphorene and method for doping phosphorene
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Application No.: US15959411Application Date: 2018-04-23
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Publication No.: US10658470B2Publication Date: 2020-05-19
- Inventor: Yu-Ming Lin , Chao-Hsin Wu , Hsun-Ming Chang , Samuel C. Pan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: Maschoff Brennan
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/24 ; H01L29/66 ; H01L29/786 ; H01L29/06 ; H01L29/40 ; H01L21/385 ; H01L29/10 ; H01L29/778 ; H01L29/861 ; H01L29/45 ; H01L29/267 ; H01L21/4757
Abstract:
A method includes providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, annealing the dopant source layer to drive a dopant from the dopant source layer into the BP layer, and forming a conductive contact over the dopant source layer.
Public/Granted literature
- US20190148499A1 DEVICE WITH PHOSPHORENE AND FABRICATION THEREOF Public/Granted day:2019-05-16
Information query
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