Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16234577Application Date: 2018-12-28
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Publication No.: US10658478B2Publication Date: 2020-05-19
- Inventor: Chi-Feng Huang , Chia-Chung Chen , Victor Chiang Liang , Meng-Chang Ho , Chung-Hao Chu , Tz-Hau Guo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/78 ; H01L27/088 ; H01L21/8234 ; H01L29/49 ; H01L29/66 ; H01L21/28 ; H01L21/8238 ; H01L29/94 ; H01L27/092
Abstract:
A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric layer, a metal layer, and a semiconductor layer. The metal layer is disposed on the gate dielectric layer. The semiconductor layer is disposed on the gate dielectric layer. The metal layer surrounds the semiconductor layer.
Public/Granted literature
- US20190157408A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-23
Information query
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