Invention Grant
- Patent Title: Atomic layer deposition methods and structures thereof
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Application No.: US15978546Application Date: 2018-05-14
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Publication No.: US10658488B2Publication Date: 2020-05-19
- Inventor: Hsin-Yi Lee , Cheng-Yen Tsai , Da-Yuan Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/28 ; H01L21/285 ; H01L27/088 ; H01L21/67 ; H01L29/51

Abstract:
A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.
Public/Granted literature
- US20180261678A1 ATOMIC LAYER DEPOSITION METHODS AND STRUCTURES THEREOF Public/Granted day:2018-09-13
Information query
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