Invention Grant
- Patent Title: Method for manufacturing semiconductor devices with superjunction structures
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Application No.: US16054236Application Date: 2018-08-03
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Publication No.: US10658497B2Publication Date: 2020-05-19
- Inventor: Daniel Hölzl , Henning Kraack , Gabor Mezoesi , Hans-Joachim Schulze , Waqas Mumtaz Syed
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@38658e49
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66 ; H01L29/06 ; C30B31/22 ; H01L21/322 ; C30B29/06 ; H01L21/306 ; H01L29/08
Abstract:
A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×1017 cm−3, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.
Public/Granted literature
- US20190043971A1 Method for Manufacturing Semiconductor Devices with Superjunction Structures Public/Granted day:2019-02-07
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