Invention Grant
- Patent Title: Thin film transistor, array substrate, method for manufacturing the same, and display device
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Application No.: US15169021Application Date: 2016-05-31
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Publication No.: US10658516B2Publication Date: 2020-05-19
- Inventor: Junhao Han , Bingkun Yin , Jun Ma , Min Zhang
- Applicant: BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing CN Hefei
- Assignee: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing CN Hefei
- Agency: Banner & Witcoff, Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@49ac8f6
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/45 ; H01L21/285 ; H01L29/08 ; H01L29/66 ; H01L29/78

Abstract:
Disclosed is a thin film transistor, an array substrate, a method for manufacturing the same, and a display device. The method includes: forming a source and drain on a base substrate and forming a semiconductor layer. Between the step of forming the source and drain and the step of forming the semiconductor layer, the method further includes: forming a diffusion barrier layer. Metal atoms diffused from the source and drain and passing through the diffusion barrier layer react with a part of the semiconductor layer near the source and drain, and a metal transition layer containing metal silicide is formed.
Public/Granted literature
- US20180166584A9 Thin Film Transistor, Array Substrate, Method for Manufacturing the Same, and Display Device Public/Granted day:2018-06-14
Information query
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