The semiconductor device according to the present invention includes: an n-type semiconductor substrate; a p-type anode layer provided in a front surface of the n-type semiconductor substrate; an anode electrode provided on the p-type anode layer; and a wire connected to the anode electrode, the p-type anode layer includes: a p+-type anode layer disposed to include a position right under a portion where the wire is connected; and a p−-type anode layer disposed to exclude the position right under the portion where the wire is connected, and an impurity concentration of the p+-type anode layer is higher than an impurity concentration of the p−-type anode layer.