Invention Grant
- Patent Title: Micro-light-emitting diode device
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Application No.: US15788253Application Date: 2017-10-19
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Publication No.: US10658540B2Publication Date: 2020-05-19
- Inventor: Tsung-Yi Lin , Cheng-Chieh Chang
- Applicant: AU Optronics Corporation
- Applicant Address: TW Hsin-Chu
- Assignee: AU OPTRONICS CORPORATION
- Current Assignee: AU OPTRONICS CORPORATION
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6bfc960
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/22 ; H01L33/00

Abstract:
A micro-light-emitting diode device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer. The second semiconductor layer and the active layer have an interface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-light-emitting diode device. A distance between the light-exiting surface and the interface decreases from a central axis of the second semiconductor layer to an edge of the second semiconductor layer, so as to provide a focusing effect for the light by the light-exiting surface.
Public/Granted literature
- US20180047865A1 MICRO-LIGHT-EMITTING DIODE DEVICE Public/Granted day:2018-02-15
Information query
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