Invention Grant
- Patent Title: Near-field based thermoradiative device
-
Application No.: US15865450Application Date: 2018-01-09
-
Publication No.: US10658968B2Publication Date: 2020-05-19
- Inventor: Bingnan Wang , Chungwei Lin , Koon Hoo Teo
- Applicant: Mitsubishi Electric Research Laboratories, Inc.
- Applicant Address: US MA Cambridge
- Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee Address: US MA Cambridge
- Agent Gennadiy Vinokur; James McAleenan; Hironori Tsukamoto
- Main IPC: H02S10/30
- IPC: H02S10/30 ; H01L31/0525 ; H01L31/02

Abstract:
A thermoradiative device for generating power includes a thermoradiative element having a top surface and a bottom surface, wherein the thermoradiative element is a semiconductor material having a bandgap energy Eg. The device includes a thermal conductive element having a first surface and a second surface, wherein the first surface is arranged to face the bottom surface of the thermoradiative element, and the first surface is a structured surface having a periodic structure, wherein the structured surface is separated from the bottom surface with a distance d to establish near-field resonance between the bottom surface and the structured surface. The device further includes supporters configured to bond the thermoradiative element and the thermal conductive element.
Public/Granted literature
- US20180287548A1 Near-Field Based Thermoradiative Device Public/Granted day:2018-10-04
Information query