Invention Grant
- Patent Title: Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
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Application No.: US15923360Application Date: 2018-03-16
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Publication No.: US10662548B2Publication Date: 2020-05-26
- Inventor: Brian H. Mackintosh , Peter L. Kellerman , Dawei Sun
- Applicant: Leading Edge Crystal Technologies, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Leading Edge Crystal Technologies, Inc.
- Current Assignee: Leading Edge Crystal Technologies, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Hodgson Russ LLP
- Main IPC: C30B15/14
- IPC: C30B15/14 ; C30B15/06 ; C30B29/06

Abstract:
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
Public/Granted literature
- US20180202066A1 METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT Public/Granted day:2018-07-19
Information query
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