To suppress an increase in a voltage drop in a non-volatile memory including a variable resistive element installed therein. A memory controller includes a voltage drop amount estimating unit and an encoding unit. The voltage drop amount estimating unit estimates a voltage drop amount from a wiring resistance of a wiring up to a memory cell and a leakage current occurring in the memory cell when original data is caused to be held in the memory cell. The encoding unit performs a predetermined encoding process on the original data in a case in which the estimated voltage drop amount exceeds a predetermined threshold value.