- Patent Title: Resistive nonvolatile memory cells with shared access transistors
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Application No.: US16286942Application Date: 2019-02-27
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Publication No.: US10665281B1Publication Date: 2020-05-26
- Inventor: Ajey Poovannummoottil Jacob , Amogh Agrawal , Bipul C. Paul
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22
Abstract:
A device is disclosed including a first resistive storage element, a first access transistor having a first terminal coupled to the first resistive storage element at a first node, a second resistive storage element, a second access transistor having a first terminal coupled to the second resistive storage element at a second node, and a write assist transistor having a first terminal coupled to the first node and a second terminal coupled to the second node.
Information query
