- Patent Title: Semiconductor devices, circuits and methods for read and/or write assist of an SRAM circuit portion based on voltage detection and/or temperature detection circuits
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Application No.: US16172787Application Date: 2018-10-27
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Publication No.: US10665294B2Publication Date: 2020-05-26
- Inventor: Darryl G. Walker
- Applicant: Darryl G. Walker
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C7/04 ; G11C11/412 ; G11C29/02 ; G11C5/14 ; G11C7/22

Abstract:
A method of operating a semiconductor device powered by a first power supply potential can include generating a first voltage signal having a first logic level in response to a voltage detector circuit detecting that the first power supply potential is essentially lower than a predetermined voltage; latching the first voltage signal to provide a first latched voltage signal; generating at least one read or write assist signal having a read or write assist enable logic level in response to the first latched voltage signal; and altering a read or write operation to a static random access memory (SRAM) cell in response to the at least one read or write assist signal having the read or write assist enable logic level as compared to when the at least one read or write assist signal has a read or write assist disable logic level.
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