Invention Grant
- Patent Title: Co-wound resistor
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Application No.: US16058928Application Date: 2018-08-08
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Publication No.: US10665370B2Publication Date: 2020-05-26
- Inventor: Haitao Cheng , Chao Song , Ye Lu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01C3/02
- IPC: H01C3/02 ; H01L49/02 ; H01L27/02 ; H01C17/04 ; H01C3/16 ; G06F30/36 ; G06F30/3312

Abstract:
A co-wound resistor with a low parasitic inductance includes a first resistive strip having an input and a second resistive strip having an output. The second resistive strip has a similar shape as the first resistive strip. The second resistive strip is co-wound in a same direction as the first resistive strip. The second resistive strip and the first resistive strip are configured to generate a mutual inductance that cancels an inductance of the first resistive strip and the second resistive strip. The first interconnect coupling the first resistive strip to the second resistive strip. The first resistive strip, the second resistive strip and the first interconnect are on a same level.
Public/Granted literature
- US20200051718A1 CO-WOUND RESISTOR Public/Granted day:2020-02-13
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