Invention Grant
- Patent Title: Capacitor having bottom electrode comprising TiN
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Application No.: US15811359Application Date: 2017-11-13
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Publication No.: US10665391B2Publication Date: 2020-05-26
- Inventor: Kei Hirata
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01G4/008
- IPC: H01G4/008 ; H01L49/02
Abstract:
Disclosed herein is an apparatus that includes a bottom electrode, a top electrode, and a dielectric film disposed between the bottom electrode and the top electrode. The bottom electrode includes TiN having more (111) crystal orientation than (200) crystal orientation.
Public/Granted literature
- US20190148067A1 CAPACITOR HAVING BOTTOM ELECTRODE COMPRISING TiN Public/Granted day:2019-05-16
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