Invention Grant
- Patent Title: Gas supply system, substrate processing system and gas supply method
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Application No.: US15645521Application Date: 2017-07-10
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Publication No.: US10665430B2Publication Date: 2020-05-26
- Inventor: Atsushi Sawachi , Norihiko Amikura , Kouji Nishino , Yohei Sawada , Yoshiharu Kishida
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f3ff2d0 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5b4356b5
- Main IPC: H01J37/32
- IPC: H01J37/32 ; F16K7/12 ; F16K31/00 ; G05D7/06 ; G05D11/13 ; H01L21/67 ; H01L21/3065 ; C23C16/455

Abstract:
A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas; an orifice provided downstream of the control valve and at a terminus of the second flow channel; a switching valve, provided at a connection point between the first flow channel and the terminus of the second flow channel, configured to control a supply timing of the second gas; an exhaust mechanism, connected to a flow channel between the control valve and the orifice in the second flow channel, configured to exhaust the second gas; and a controller configured to bring the control valve, the switching valve and the exhaust mechanism into operation.
Public/Granted literature
- US20180012735A1 GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING SYSTEM AND GAS SUPPLY METHOD Public/Granted day:2018-01-11
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