Included herein are, a step of forming an active region for a semiconductor device on a front surface of a SiC substrate, a step of forming a SiC substrate-to-drain electrode bonding region on a back surface of the SiC substrate by grinding it using an abrasive whose average abrasive grain size is within a specified range, a step of depositing a film of a first drain electrode on the SiC substrate-to-drain electrode bonding region, a step of electrically connecting the first drain electrode with the SiC substrate-to-drain electrode bonding region, and a step of depositing a film of a second drain electrode on the first drain electrode, so that a SiC semiconductor device having a high mechanical strength with a reduced energization loss is achieved.