A method for fabricating a semiconductor device with multiple threshold voltages includes masking a substrate structure to selectively form work-function metal layers on vertical field effect transistors. In the method, a first work function metal layer is formed on a high-k dielectric layer of a substrate structure comprising vertical field effect transistors. The first work function metal layer and the high-k dielectric layer are etched to form gate regions for each vertical field effect transistor. A resist mask is formed over a first of the vertical field effect transistors. The resist mask isolates the first of the vertical field effect transistors from a second of the vertical field effect transistors. A second work function metal layer is selectively formed on the first work function metal layer of the gate region of the second of the vertical field effect transistors. The resist mask is then removed.