Invention Grant
- Patent Title: Self-limiting liners for increasing contact trench volume in N-type and P-type transistors
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Application No.: US16002559Application Date: 2018-06-07
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Publication No.: US10665511B2Publication Date: 2020-05-26
- Inventor: Kangguo Cheng , Choonghyun Lee , Juntao Li , Peng Xu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L29/417
Abstract:
Embodiments of the invention are directed to a method of forming a protective liner of a semiconductor device, wherein the method includes forming a source or a drain (S/D) region, forming a first layer of protective material over a top surface of the S/D region, and forming a second layer of protective material over the first layer of protective material, wherein the second layer of protective material includes an oxide of a first type of material. An anneal is applied to the first layer and the second layer to drive the first type of material into the first layer, drive a second type of material from the first layer into the second layer, and convert at least a portion of the second layer of protective material to an oxide of the second type of material, wherein the oxide of the second type of material is the protective liner.
Public/Granted literature
- US20190378764A1 SELF-LIMITING LINERS FOR INCREASING CONTACT TRENCH VOLUME IN N-TYPE AND P-TYPE TRANSISTORS Public/Granted day:2019-12-12
Information query
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