Invention Grant
- Patent Title: Semiconductor device including conductive patterns
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Application No.: US16100333Application Date: 2018-08-10
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Publication No.: US10665544B2Publication Date: 2020-05-26
- Inventor: Seok-Ho Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a162899
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L27/11 ; H01L21/033 ; H01L21/768 ; H01L49/02 ; H01L29/08 ; H01L27/11517 ; H01L29/06 ; H01L27/108

Abstract:
A semiconductor device includes a substrate including first and second regions, which are arranged along a first direction. A first conductive pattern extends in the first direction in the first region. A second conductive pattern extends in the first direction in the first region. The second conductive pattern is spaced apart from the first conductive pattern. A first spacer extends between the first conductive pattern and the second conductive pattern along a sidewall of the first conductive pattern, a sidewall of the second conductive pattern, and a boundary between the first and second regions. A distance between the first conductive pattern and the second region is smaller than a distance between the second conductive pattern and the second region.
Public/Granted literature
- US20190214345A1 SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE PATTERNS AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-07-11
Information query
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