Invention Grant
- Patent Title: Radio-frequency isolation cavities and cavity formation
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Application No.: US16293310Application Date: 2019-03-05
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Publication No.: US10665552B2Publication Date: 2020-05-26
- Inventor: David T. Petzold , David Scott Whitefield
- Applicant: SKYWORKS SOLUTIONS, INC.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Chang & Hale LLP
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H01L21/335 ; H01L21/8234 ; H01L23/00 ; H01L27/12 ; H01L21/84 ; H01L23/66 ; H03H9/24 ; H01L29/786 ; H01L21/762 ; H01L21/764 ; H01L21/768 ; H01L23/528 ; H01L49/02 ; H01L29/06 ; H01L29/78 ; H04B1/40 ; H01L21/306 ; H01L23/535 ; H01L29/66 ; H01L21/683 ; H01L27/20 ; H03H9/02 ; H01L23/31 ; H01L25/16
Abstract:
A method for fabricating a radio-frequency device involves providing a semiconductor wafer including a transistor device, applying a form of sacrificial material on the semiconductor wafer, applying an interface material over the form of sacrificial material, and removing at least a portion of the form of sacrificial material to form a cavity at least partially covered by the interface material.
Public/Granted literature
- US20190198458A1 RADIO-FREQUENCY ISOLATION CAVITIES AND CAVITY FORMATION Public/Granted day:2019-06-27
Information query
