According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect layer provided above a semiconductor substrate; a plurality of second interconnect layers provided above the first interconnect layer; a semiconductor layer electrically coupled to the first interconnect layer; a first insulating layer provided between the semiconductor layer and the plurality of second interconnect layers; and a plurality of first oxide layers in which one side of the first oxide layers is in contact with the plurality of second interconnect layers while the other side of the first oxide layers is in contact with the first insulating layer, and a voltage is applied to the plurality of second interconnect layers to vary a resistance value.