Invention Grant
- Patent Title: Metal oxide and field-effect transistor
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Application No.: US15610796Application Date: 2017-06-01
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Publication No.: US10665611B2Publication Date: 2020-05-26
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@43e8955a com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@9cc8a86 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32233ac7 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@34ef3484 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@332a2506 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5e5f015f com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7501ed51 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3887bc61
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/06 ; H01L29/66

Abstract:
To provide a novel material. In a field-effect transistor including a metal oxide, a channel formation region of the transistor includes a material having at least two different energy band widths. The material includes nano-size particles each with a size of greater than or equal to 0.5 nm and less than or equal to 10 nm. The nano-size particles are dispersed or distributed in a mosaic pattern.
Public/Granted literature
- US20170352690A1 METAL OXIDE AND FIELD-EFFECT TRANSISTOR Public/Granted day:2017-12-07
Information query
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