Invention Grant
- Patent Title: Manufacturing method of array substrate and array substrate
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Application No.: US16203785Application Date: 2018-11-29
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Publication No.: US10665622B2Publication Date: 2020-05-26
- Inventor: Xiaowen Lv
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Leong C. Lei
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@10a4e3b
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/04

Abstract:
Disclosed is a manufacturing method of an array substrate, comprising steps of: depositing a first metal layer on a substrate; depositing a gate insulating layer on the substrate and the first metal layer, and forming a first via hole in the in-plane region of the gate insulating layer; depositing a second metal layer in an in-plane region and an out-of-plane of the gate insulating layer, wherein the second metal layer located in the in-plane region fills the first via hole; depositing a passivation layer on the second metal layer and the gate insulating layer, and forming a second via hole in the in-plane region of the passivation layer; forming a third via hole and a fourth via hole in the out-of plane region of the passivation layer, respectively; depositing a transparent conductive layer in the in-plane region and in the out-of-plane region of the passivation layer, respectively.
Public/Granted literature
- US20200027906A1 MANUFACTURING METHOD OF ARRAY SUBSTRATE AND ARRAY SUBSTRATE Public/Granted day:2020-01-23
Information query
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