The invention relates to a method for manufacturing a photodetector able to operate for the photodetection of infrared electromagnetic waves, comprising a stack of thin layers placed on top of one another. The method includes obtaining a first assembly (E1) of stacked layers, forming a detection assembly, comprising a first substrate layer, a photoabsorbent layer, a barrier layer and at least one contact layer, and a second assembly (E2) of stacked layers forming a reading circuit, comprising at least one second substrate layer and a multiplexing layer. The first and second assemblies are glued between the contact layer of the first assembly and the multiplexing layer of the second assembly. Etching through the second assembly makes it possible to obtain a plurality of interconnect vias, then p or n doping of zones of the first contact layer of the first assembly through the interconnect vias.