A gate-controlled bipolar junction transistor includes a substrate, an emitter region, a base region disposed on one side of the emitter region, and a collector region disposed on one side of the base region and being opposite to the emitter region. The emitter region includes first fin structures, first metal gates extending across the first fin structures, and an emitter contact plug on the first fin structures. A gate contact region is disposed between the emitter region and the base region. Each of the first metal gates includes an extended contact end portion protruding toward the base region. The extended contact end portion is disposed within the gate contact region. A gate contact is disposed on the extended contact end portion.