Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US14866594Application Date: 2015-09-25
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Publication No.: US10665693B2Publication Date: 2020-05-26
- Inventor: Chun-Hsiung Tsai , Kei-Wei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/165
Abstract:
A semiconductor structure includes a semiconductor substrate, n-type source and drain stressors, and a gate stack. The semiconductor substrate has source and drain recesses therein. The n-type source and drain stressors are respectively present in the source and drain recesses. At least one of the n-type source and drain stressors has a hydrogen terminated surface. A gate stack is present on the semiconductor substrate and between the n-type source and drain stressors.
Public/Granted literature
- US20160322474A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-11-03
Information query
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