Invention Grant
- Patent Title: Reducing gate-induced-drain-leakage current in a transistor by forming an enhanced band gap layer at the channel-to-drain interface
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Application No.: US16165440Application Date: 2018-10-19
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Publication No.: US10665698B2Publication Date: 2020-05-26
- Inventor: Choonghyun Lee , Kangguo Cheng , Juntao Li , Shogo Mochizuki
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/10 ; H01L29/08 ; H01L21/324 ; H01L21/02 ; H01L21/225 ; H01L29/78 ; H01L29/165 ; H01L29/167
Abstract:
Embodiments of the invention are directed to a method of forming a semiconductor device. The method includes forming a channel region comprising a channel region semiconductor material having a first energy band gap characteristic. A source region is formed communicatively coupled to the channel region. A drain region is formed communicatively coupled to the channel region. A gate region is formed communicatively coupled to the channel region. An enhanced band gap region is positioned substantially positioned at an interface between the channel region and the drain region. The enhanced band gap region includes an enhanced band gap region semiconductor material having a second band gap energy characteristic. The first energy band gap is less than the second energy band gap.
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