Invention Grant
- Patent Title: LDMOS device with a field plate contact metal layer with a sub-maximum size
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Application No.: US16122836Application Date: 2018-09-05
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Publication No.: US10665712B2Publication Date: 2020-05-26
- Inventor: Eric Braun , Joel McGregor , Jeesung Jung
- Applicant: Monolithic Power Systems Co., Ltd.
- Applicant Address: US CA San Jose
- Assignee: Monolithic Power Systems, Inc.
- Current Assignee: Monolithic Power Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Perkins Coie LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L21/8238 ; H01L29/08
Abstract:
An LDMOS device with a field plate contact having a field plate contact metal layer being positioned above the field plate contact. The field plate contact metal layer has a sub-maximum size satisfied for the electrical connection between the field plate contact and an external applying voltage. This sub-maximum size is prescribed by the physical limitation of the LDMOS device. The field plate contact metal layer extends a sub-maximum length from one edge toward to the other edge of the field plate contact.
Public/Granted literature
- US20200075760A1 LDMOS DEVICE WITH A FIELD PLATE CONTACT METAL LAYER WITH A SUB-MAXIMUM SIZE Public/Granted day:2020-03-05
Information query
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