A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate having an n-type drift layer, and a p-type well region formed in a surface portion of a part of the drift layer, an insulating film provided on the well region, a gate built-in resistor formed of polysilicon in contact with a surface of the insulating film, an interlayer insulating film formed on the gate built-in resistor, a gate contact wire that is connected to a gate pad and formed on the interlayer insulating film, a gate wire provided on the interlayer insulating layer so as to be apart from the gate contact wire, a first gate contact for electrically connecting the gate contact wire and the gate built-in resistor, and a second gate contact for electrically connecting the gate wire and the gate built-in resistor.