In-cell bypass diode

Invention Grant

US10665739B2 In-cell bypass diode 有权

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Patent Title: In-cell bypass diode
Application No.: US15220273

Application Date: 2016-07-26
Publication No.: US10665739B2

Publication Date: 2020-05-26
Inventor: Seung Bum Rim , Gabriel Harley
Applicant: SUNPOWER CORPORATION
Applicant Address: US CA San Jose
Assignee: SunPower Corporation
Current Assignee: SunPower Corporation
Current Assignee Address: US CA San Jose
Agency: Schwabe, Williamson & Wyatt, P.C.
Main IPC: H01L31/0443
IPC: H01L31/0443 ; H01L31/18 ; H01L27/142 ; H01L31/02 ; H01L31/0368

Abstract:

A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

Public/Granted literature

US20170012153A1 IN-CELL BYPASS DIODE Public/Granted day:2017-01-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/042	..单个光伏电池的光伏模块或者阵列（用于光伏模块的支撑结构入H02S20/00）
H01L31/044	...包括旁路二极管的（接线盒中的旁路二极管入H02S40/34）
H01L31/0443	....包括与器件集成或者直接相关的旁路二极管，如在作为光伏电池的同一衬底之中或者之内集成或者形成的旁路二极管