Invention Grant
- Patent Title: Bias circuit and power amplifier circuit
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Application No.: US16014121Application Date: 2018-06-21
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Publication No.: US10666211B2Publication Date: 2020-05-26
- Inventor: Bo Hyun Hwang , Dae Hee No , Jun Goo Won , Ki Joong Kim , Sung Hwan Park , Da Hye Park
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6e43db4
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F3/24 ; H03F3/21 ; H03F1/02

Abstract:
A power amplifier circuit includes a bias circuit and an amplifier circuit. The bias circuit includes a first bias circuit to receive a reference voltage and an operation voltage and generate a first bias signal, a bias supply circuit to transmit the base bias signal to a base of a power amplifier, based on the first bias signal input from the first bias circuit, a switching control circuit to transmit a switching signal after a preset delay time based on a driving start signal, and a switching circuit connected between an output node of the first bias circuit and a ground, to operate in an ON state after the delay time in response to the switching signal to form a current path between the output node of the first bias circuit and the ground.
Public/Granted literature
- US20190199303A1 BIAS CIRCUIT AND POWER AMPLIFIER CIRCUIT Public/Granted day:2019-06-27
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