Invention Grant
- Patent Title: Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions
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Application No.: US16003506Application Date: 2018-06-08
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Publication No.: US10670187B2Publication Date: 2020-06-02
- Inventor: Mohamed M. Hilali
- Applicant: Zhejiang Kaiying New Materials Co., Ltd.
- Applicant Address: CN Zhejiang
- Assignee: Zhejiang Kaiying New Materials Co., Ltd.
- Current Assignee: Zhejiang Kaiying New Materials Co., Ltd.
- Current Assignee Address: CN Zhejiang
- Main IPC: F17C3/02
- IPC: F17C3/02 ; H01L31/068 ; H01L31/0352 ; H01L31/18 ; H01L33/44 ; H01L31/0236 ; H01L31/072 ; H01L31/0224
Abstract:
Screen-printable metallization pastes for forming thin oxide tunnel junctions on the back-side surface of solar cells are disclosed. Interdigitated metal contacts can be deposited on the oxide tunnel junctions to provide all-back metal contact to a solar cell.
Public/Granted literature
- US20180320821A1 INTERDIGITATED BACK CONTACT METAL-INSULATOR-SEMICONDUCTOR SOLAR CELL WITH PRINTED OXIDE TUNNEL JUNCTIONS Public/Granted day:2018-11-08
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