Invention Grant
- Patent Title: Photolithography method and photolithography system
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Application No.: US16225776Application Date: 2018-12-19
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Publication No.: US10670540B2Publication Date: 2020-06-02
- Inventor: Chi-Hung Liao , Wei Chang Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/16
- IPC: G03F7/16 ; G01N21/956 ; H01L21/027 ; H01L21/67 ; H01L21/68 ; G01N21/95

Abstract:
A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.
Public/Granted literature
- US20200003701A1 Photolithography Method and Photolithography System Public/Granted day:2020-01-02
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